The electrical and galvanomagnetic properties of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) were studied in a wide temperature range of 5-300K and magnetic fields up to 8 T. The band gap of the composition InAs0.57Sb0.43 was estimated from the thermo-activation dependence of the electrical conductivity, and is equal to 120 meV. The electron concentration in InAs1-xSbx (n=6·1016 cm-3 for InAs0.62Sb0.38 and n=5·1016 cm-3 for InAs0.57Sb0.43) determined from the Hall effect and consistent with the electron concentration calculated from Shubnikov-de Haas oscillations. Also, implemented spectral ellipsometric studies of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) in the photon energy range of 1-6 eV. The spectral dependences of the imaginary and real parts of the dielectric constant are determined. The dispersion dependences of the refractive indices and extinction are calculated and given.

Получены нерелаксированные слои твердого раствора InAs 1−x Sbx (x = 0.43 и 0.38) методом молеку-лярно-лучевой эпитаксии с использованием градиентных буферных слоев GaInSb и AlGaInSb. Высокое качество полученных тонких пленок подтверждается результатами исследований высокоразрешающей рент-геновской дифракции и микро-рамановского рассеяния. Выявлен двухмодовый тип перестройки фононных спектров твердых растворов InAs 1−x Sbx .

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