The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range Ti (23 and 1750C). The blocking voltage of the diodes under study, Ub, was 600 and 1700 V. For devices with Ub = 600 V, the fluence range was 5×1013–1×1014 cm-2; for devices with Ub = 1700 V, the fluence range was 3×1013 – 6×1013 cm-2. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current-voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied.