The mechanical strength of various silicon wafers with a thickness of 100 µm has been studied, depending on the methods of their preparation and the modes of their subsequent grinding or polishing, including chemical-mechanical (HMP). The plates were loaded using the ring-to-ring method, the magnitude of stresses and deflection under the small ring was determined by the finite element method. For all the samples studied, the profiles and roughness parameters of the plates were obtained by stylus profilometry and atomic force microscopy (AFM) when scanning the surface along the baseline and over the area. A direct correlation was found between the strength of the plates and the characteristic parameters of their surface profile (the average values of the magnitude and period of fluctuations in the height of the irregularities).

The mechanical strength of silicon wafers of 100 µm thickness was studied. Loading of the wafers was carried out by the “ring-on ring” method, stress and deflection under the small ring were determined by finite element modeling. The validity of the calculation model was checked by comparing the dependences of the deflection under the small ring on the load obtained in the experiment and by the simulation. The effect of methods of wafers obtaining and their surface treatment on the strength, as well as the connection between the strength and surface roughness characteristics were shown.