Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of an electron beam irradiation of amorphous hydrogenated silicon suboxide films with a stoichiometric coefficient of 0.5 (a-SiO0.5:H) and a thickness of 580 nm. The accelerating voltage of the electron beam was 2000 V, and the beam current was 100 mA. Raman spectra of silicon films after annealing are obtained depending on the time of electron beam irradiation of the initial material. It is shown that as a result of annealing, poly-Si is formed, the stress in which varied from compression to tension depending on the time of exposure.

For the first time, polycrystalline silicon (poly-Si) was obtained as a result of the gold-induced crystallization of amorphous silicon suboxide (a-SiOx). It is shown that, during annealing of a sample with a “substrate/gold thin film/a-SiO0.2 thin film” structure at 335 ℃, poly-Si is formed in a bottom layer (on the substrate), while gold diffuses into the upper layer. With an increase in the temperature to 370 ℃, the mechanism of poly-Si formation remains unchanged, however, only the rate of the crystallization process increases. Apparently, the process of poly-Si formation proceeds through the formation of gold silicides, which almost completely decompose into crystalline phases of gold and silicon at 370 ℃ for 10 h.