A brief review and results of experimental investigation of the properties of energy-saturated nanoporous silicon-based composites are presented. Various types of oxidants used in the composites are examined. Calcium perchlorate has been used as an oxidant. The energy-saturated composite under study is shown to exceed in several parameters the primary explosive, mercury fulminate and brisant explosive, RDX.

Исследована чувствительность к воздействию сильноточного электронного пучка энергонасыщенного соединения на основе нанопористого кремния и перхлората кальция. Проведены исследования по возбуждению взрывчатых превращений с помощью высоковольтного разряда смеси пикрата калия с высокодисперсным порошком кремния, легированного бором. Показано, что под действием электронного пучка в исследованном энергонасыщенном соединении возникают режимы взрывчатого превращения (горение и взрыв). Установлена связь режимов взрывчатого превращения с плотностью энергонасыщенного соединения и напряжения пробоя (инициирования) с массовой долей порошка кремния. DOI: 10.21883/FTP.2017.04.44342.8391

In this paper, we discuss causes of the multidirectional effect of changes in the concentrations of free charge carriers in silicon crystals of p - and n -type conductivity on the transverse dimensions of pores formed as a result of anodic etching in hydrofluoric acid solutions, as well as the effect of anodic current density on pore size. The observed dependences are explained based on the concepts of electrochemical pore formation in semiconductor crystals as self-organizing cooperative processes accompanied by the injection of electrons from the chemical reaction region at the pore advancement front. Differences in the size of pores forming at the same current density in crystals differing in type and concentration of free charge carriers are associated with the effective temperature of the front of the cooperative chemical reaction at the bottom of germinating pores. This temperature, in turn, correlates with the power density of thermal energy released in the near-surface region of the etching crystal, either due to recombination processes for a p -type semiconductor or direct or indirect energy transfer from hot electrons to lattice vibrations in the case of a n -type semiconductor. The characteristic relaxation times of injected nonequilibrium electrons were calculated depending on the concentrations of the majority charge carriers in silicon crystals of both types of conductivity and the corresponding thicknesses of the regions of relaxation energy release. The revealed patterns of concentration changes in the power density of heat release in the near-frontal region of etching silicon crystals of p - and n -type conductivity are in good agreement with observed changes in the size of germinating pores.

The effect of comparatively small changes in the free carrier concentration in a heavily doped p ‑type single-crystal silicon on the structural parameters of porous layers formed as a result of its anodic etching has been found. The pronounced influence exerted by the hole concentration on the structural porous silicon parameters being studied is explained on the basis of the concept of electrochemical pore-formation in silicon crystals as a self-organized cooperative process accompanied by the injection of electrons from the region of the chemical reaction at the propagation front of pores.