Studies of the dynamics of changes in the crystal structure, elemental and chemical composition of the surface layers of Si implanted with Na + , Rb + and Cs + ions during gradual heating in various temperature conditions. In the case of Na + ions, after heating at a temperature of T = 900 K, a NaSi 2 film is formed on the surface, at T = 1000 K, a monolayer coating of NaSi 2 and at T = 1100 K the surface layers of Si are completely cleaned of atoms of the alloying element, as well as oxygen and carbon.