In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 10^16 cm^–2 during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.

The structural features of the formation of radiation defects in proton-implanted layers of silicon wafers during their heat treatment are studied. New data on the nature, characteristics and concentration of microdefects in Si crystals irradiated with protons with energies of 100+200+300 Kev, with a total dose of 2·1016 ion/cm2, and the evolution of the defective structure during heat treatment in a wide temperature range from 200 to 1100°C were obtained from the analysis of the results of studies by high-resolution three-crystal X-ray diffractometry and transmission electron microscopy. This work was supported by the Ministry of Science and Higher Education within the State assignment FSRC «Crystallography and Photonics» RAS.