The results of studying the effect of various conditions of heat dissipation on heating and temperature distribution in components of concentrator photovoltaic modules are reported. The modules based on Fresnel lenses and triple-junction solar cells InGaP/GaAs/Ge mounted on copper and steel heat sinks are studied. In order to determine the thermal characteristics, we use a method, which makes it possible to measure the temperature of the p–n junctions in the solar cells under laboratory conditions upon the simulation of thermal processes arising in the course of operation of the module under typical conditions. Further, the above temperature is used to calculate the value of the thermal resistance for a system consisting of a solar cell and the surrounding medium. The thermal processes in the module are simulated by transferring current through the solar cells in the forward-bias direction. The value of heating of the solar cells is determined by comparing the forward-voltage drops measured at the time of its rapid application or switching-off under various conditions of heat removal. The conditions of heat removal are varied using the generator’s air flow.

Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3E−5 − 3E−6 ohm · cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of E-9 A at voltage less then 1 V.