The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si^+ ion implantation with subsequent annealing is studied. It is shown that the implantation of B^+ ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

С помощью метода просвечивающей электронной микроскопии в приграничном слое кремния структуры SiO2/Si, подвергнутой ионной имплантации и термической обработке, обнаружено образование включений гексагонального кремния (политип 9R). Образование гексагональной фазы обусловлено механическими напряжениями, возникающими в гетерофазной системе в процессе ионной имплантации. DOI: 10.21883/PJTF.2017.16.44937.16852