В настоящей работе представлены результаты экспериментального исследования фотолюминесценции серий сильнолегированных слоев AlN, выращенных методом молекулярнолучевой эпитаксии на сапфировых подложках, концентрация атомов кремния (NSi) составляла 1.11020 см-3 . При измерении ФЛ в диапазоне температур 300-1000 К использовалось возбуждение 4- ой гармоникой импульсного Nd:YLF лазера (λ=263 нм, мощность 1 мВт, длительность импульса 7 нс). При измерении ФЛ в широком диапазоне генерации носителей заряда использовалась возбуждение 4- ой гармоникой стационарного YAG лазера (λ=266 нм), максимальная мощность составляла 65 мВт.

In this paper the possibility of obtaining the intentionally undoped high resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors by ammonia molecular beam epitaxy was demonstrated. The growth conditions based on background impurity concentrations and point defects calculations for different gallium and ammonia flows ratios were optimized.

In this work, the GaN nanocrystals formation on a graphene-like modification of AlN (g-AlN) and graphene-like silicon nitride (g-Si3N3) by ammonia molecular beam epitaxy was studied. The GaN growth on the g-Si3N3 surface was found to result in the misoriented nanocrystals formation. With the GaN growth on the g-AlN surface, epitaxial growth of the equally oriented GaN quantum dots with graphite-like modification was observed. The lattice parameters and the energy structure of two GaN graphite-like modifications with alternating layers AB (graphite structure) and AA’ (hexagonal boron nitride structure) were calculated. This work was supported by the Russian Foundation for Basic Research (№ 17-02-00947-Бел_а and 18-52-00008-а). This work was supported by the Belarusian Republican Foundation for Basic Research in the framework of the joint project Ф18Р-234.