The change in the recombination properties of individual dislocations and dislocation trails in silicon
due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is
studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction
of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The
introduction of copper does not induce any substantial change in the contrast of extended defects.
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