The Goos-Hänchen effect and Fano resonance are studied in photonic crystals that are considered Fourier counterparts in wave-vector-coordinate space. The Goos-Hänchen effect, which is enhanced by the excitation of Bloch surface electromagnetic waves, is visualized using far-field microscopy and measured at the surface of photonic crystals by angular spectroscopy. The maximal Goos-Hänchen shift is observed to be 66  μm.

An appreciable increase in the fluorescence emission of an organic chromofore is obtained by exploiting the local field enhancement at the surface of one-dimensional photonic crystals after excitation of surface electromagnetic waves ͑SEW͒. Using a properly designed photonic crystal consisting of alternating a-Si 1−x N x : H layers with different nitrogen content, efficient emission of R6G dye spun on the surface of the photonic crystal is detected and the intensity spatial distribution of the SEW is visualized by means of far-field fluorescence microscopy. Our results demonstrate potential applications in enhanced fluorescence microscopy with an increased sensitivity and spectral selectivity.

Diffusion-controlled rates of formation were found from the temperature dependence of apparent quenching rate constants for exciplexes, when the driving force of excited-state electron transfer -0.1 < deltaG(ET)* < +0.1 eV. This is inconsistent with the conventional mechanism of electron-transfer reactions, involving preliminary reorganisation of the medium and reactants, and provides strong support for the mechanism of medium reorganisation stimulated by strong electronic coupling of locally excited and charge-transfer states.

Exciplex emission spectra and rate constants of their decay via internal conversion and intersystem crossing are studied and discussed in terms of conventional radiationless transition approach. Exciplexes of 9-cyanophenanthrene with 1,2,3-trimethoxybenzene and 1,3,5-trimethoxybenzene were studied in heptane, toluene, butyl acetate, dichloromethane, butyronitrile, and acetonitrile. A better description of spectra and rate constants is obtained using 0-0 transition energy and Gauss broadening of vibrational bands rather than the free energy of electron transfer and reorganization energy. The coincidence of parameters describing exciplex emission spectra and dependence of exciplex decay rate constants on energy gap gives the evidence of radiationless quantum transition mechanism rather than thermally activated medium reorganization mechanism of charge recombination in exciplexes and excited charge transfer complexes (contact radical ion pairs) as well as in solvent separated radical ion pairs. Radiationless quantum transition mechanism is shown to provide an appropriate description also for the main features of exergonic excited-state charge separation reactions if fast mutual transformations of loose and tight pairs of reactants are considered. In particular, very fast electron transfer (ET) in tight pairs of reactants with strong electronic coupling of locally excited and charge transfer states can prevent the observation of an inverted region in bimolecular excited-state charge separation even for highly exergonic reactions.

Ultrafast all-optical modulators are crucial parts of prospective photonic devices. A number of plasmonic and dielectric nanostructures were nominated as candidates for integrated all-optical circuits. The key principle in the design of such devices is to engineer artificial optical resonances to increase the magnitude of modulation or to change the characteristic switching time. The major drawback is that the manufacturing becomes rather sophisticated. Here, we propose a method to tailor the ultrafast response of photonic crystal–metal nanostructures by employing a spectral shift of the Tamm-plasmon resonance. We show that for the absorbed pump fluence of 6 pJ reflectance of the sample at the near-infrared probe wavelength in the vicinity of the Tamm-plasmon resonance changes 25× stronger as compared with a bare metal film. Additionally, we show that by choosing a proper wavelength around the resonance a background-free reflectance modulation can be achieved. The characteristic pulse-limited switching time, in this case, is 150 fs.