Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.

Abstract. Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0; 0.05; 0.1; 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag8Ge1-xMnxTe6 lattice. All p-type samples had high resistance below the transition at temperatures of 180 - 220 K. An increase in electrical conductivity in the range of 220 - 300 K was analyzed using the Mott ratio; at temperatures T > 320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT = 0.7 at 550 K was obtained for a solid solution of the composition Ag8Ge1-xMnxTe6 (х = 0.05).