Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100–200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 eV) of the room-temperature band gap energy.

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