In this paper, we report the signature of spin gapless semiconductor (SGS) in CoFeMnSi that belongs to the Heusler family. SGS is a new class of magnetic semiconductors which have a band gap for one spin subband and zero band gap for the other, and thus are useful for tunable spin transport based applications. We show various experimental evidences for SGS behavior in CoFeMnSi by carefully carrying out the transport and spin-polarization measurements. SGS behavior is also confirmed by first-principles band-structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 μ B /f.u. and Curie temperature of ∼620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly-temperature-independent carrier concentration and electrical conductivity are observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data have yielded the current spin-polarization value of 0.64, which is found to be robust against the structural disorder. All these properties strongly suggest SGS nature of the alloy, which is quite promising for the spintronic applications such as spin injection as it can bridge the gap between the contrasting behaviors of half-metallic ferromagnets and semiconductors.

RTX (R=rare earths, T= 3d/4d/5d, transition metals such as Sc, Ti, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and X=p-block elements such as Al, Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallics compounds. These compounds crystallize in different crystal structures depending on the constituents. Though these compounds have been known for a long time, they came to limelight recently in view of the large magnetocaloric effect (MCE) and magnetoresistance (MR) shown by many of them. Most of these compounds crystallize in hexagonal and tetragonal crystal structures. Some of them show crystal structure modification with annealing temperature; while a few of them show iso-structural transition in the paramagnetic regime. Their magnetic ordering temperatures vary from very low temperatures to temperatures well above room temperature (~510 K). Depending on the crystal structure, they show a variety of magnetic and electrical properties.These compounds have been characterized by means of a variety of techniques/measurements such as x-ray diffraction, neutron diffraction, magnetic properties, heat capacity, magnetocaloric properties, electrical resistivity, magnetoresistance, thermoelectric power, thermal expansion, Hall effect, optical properties, XPS, Mössbauer spectroscopy, ESR, μSR, NMR, NQR etc. Some amount of work on theoretical calculations on electronic structure, crystal field interaction and exchange interactions has also been reported. The interesting aspect of this series is that they show a variety of physical properties such as Kondo effect, heavy fermion behavior, spin glass state, intermediate valence, superconductivity, multiple magnetic transitions, metamagnetism, large MCE, large positive as well as negative MR, spin orbital compensation, magnetic polaronic behavior, pseudo gap effect etc.Except Mn, no other transition metal in these compounds possesses considerable magnetic moments.Because of this RMnX compounds in general have high ordering temperatures. Interstitial modification using hydrogen and nitrogen is found to alter their crystal structures and magnetic properties considerably. RTX compounds also show interesting pressure effects on their structural and magnetic properties. In summary, these compounds show variety of physical properties over a wide range of temperatures. This review is intended to cover all the important results obtained in this family, particularly in the last few years.

Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (TC) and tunable electronic been reported in a few systems, which are also discussed in this review. Thus, this review presents a consolidated picture of the magnetic and spintronic properties of this important, but relatively new class of Heusler alloys. It is expected that this will stimulate further interest in these alloys, thereby paving the way for the identification of more HMF and SGS materials. As a result of this, it is expected that more efficient spintronic devices using these alloys would emerge in the near future.

Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS) that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by electronicstructure calculations, we report the first experimental evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO 3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (M S ) obtained at 8 K agrees with the Slater-Pauling rule and the Curie temperature (T C ) is found to exceed 400 K. Carrier concentration (up to 250 K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185 S/cm at 5 K.Considering the SGS properties and high T C , this material appears to be promising for spintronic applications.

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