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The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100…1200 °C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.

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The paper reports that using IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of selfassembly takes place. The concentration and dimension of the clusters are mainly defined by the temperature of diffusion and the cooling rate. The composition of clusters of nickel impurity atoms was determined. It was shown that in the process of thermal annealing within the temperature range 650…900 °С there is a significant change in the state, concentration and size of clusters. Thermal annealing at the above temperatures 650…900 °С leads to ordering the clusters that is, self-assembly of cluster blocks, as well as clusters of a loop shape that includes several dozens of clusters. A diffusion technique to form and order clusters of nickel atoms in silicon has been suggested.

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