We report on optical and photovoltaic properties of NiZnSe junctions. We demonstrate that the preparation method of the ZnSe surface determines luminescence, optical transmission of ZnSe substrates and photovoltaic spectra of the NiZnSe junctions. The observed eects are explained by formation of low-dimensional quantum structures on the ZnSe surface in result of the surface preparation procedure. This is conrmed by atomic force microscopy studies, which show the presence of grains with lateral dimensions of 30300 nm on ZnSe surface. The smallest grains are responsible for a wide spectral band observed in photoluminescence at 3.4 eV, i.e., at much higher energies than the energy gap of bulk ZnSe, Eg ≈ 2.7 eV.

The results of Cd X Zn 1-X O thin films optical transmission and reflection are examined. λ-modulation method was used. The energy structure peculiarities of Cd X Zn 1-X O thin films in center Brilluen zone were determined.

No abstract

No abstract

No abstract