The paper presents the results of studying the energy dependences of the sputtering coefficient and the effective surface roughness of single-crystal silicon irradiated with neon ions with an energy of 100-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ne ions were determined, providing a high sputtering coefficient (etching rate) and an effective roughness value in the spatial frequency range 4.9∙10-2-6.3∙101 μm-1 less than 0.3 nm for the main cuts of single-crystal silicon (<1 0 0>, <1 1 0> and <1 1 1>).

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9*10-2-6.3*101 μm-1 less than 0.3 nm for the main cuts monocrystalline silicon <1 0 0>, <1 1 0> and <1 1 1>.