Stupak M.F.1,3, Mikhailov N.N.2,3, Dvoretsky S.A.2,4, Makarov S.N.1, Yelesin A.G.1, Verhoglyad A.G.1 1 Technological Design Institute of Scientific Instrument Engineering of the Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS), Novosibirsk, 630058, Russian, 41 2 The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS), Novosibirsk, 630090, etc. Akad. Lavrentieva, 13 3 Novosibirsk State University (NSU), Novosibirsk, 630090, Pirogov, 2 4 Tomsk State University (TSU), 634050, Tomsk, Etc. Lenin, 36 Tel: 7 913 948-9824, e. Mail: stupak@tdisie.nsc.ru Annotation. The characteristics of a highly sensitive express stand of non-linear-optical diagnosis of crystalline structures such as sphalerite by generation of the second harmonica are presented. The analysis of quantitative and qualitative characterization capabilities was carried out using the stand of features of crystalline parameters of layers of heteroepitaxial structures cdhHg1-xTe on substralis from GaAs with orientation (013). The results were obtained by deviations of orientation in layers from the orientation of the substrate, which arose during the epitaxy, to determine the existence of stresses. The high sensitivity of the stand revealed the presence/absence of micro-particles with a disordered crystalline structure. Experimental results of reversible modification of the "in situ" crystalline state of CdxHg1-xTe structures with short-term local radiation exposure of high power laser radiation are given. New experimental data have been presented showing that the components of the nonlineaic susceptibility tensor cxyz(w) of the crystalline structure of CdxHg1-xTe depend on composition and are an order of magnitude larger than similar components of tensor in CdTe and GaAs.

Stupak M.F.1,3, Mikhailov N.N.2,3, Dvoretsky S.A.2,4, Makarov S.N.1, Yelesin A.G.1, Verhoglyad A.G.1 1 Technological Design Institute of Scientific Instrument Engineering of the Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS), Novosibirsk, 630058, Russian, 41 2 The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS), Novosibirsk, 630090, etc. Akad. Lavrentieva, 13 3 Novosibirsk State University (NSU), Novosibirsk, 630090, Pirogov, 2 4 Tomsk State University (TSU), 634050, Tomsk, Etc. Lenin, 36 Tel: 7 913 948-9824, e. Mail: stupak@tdisie.nsc.ru Annotation. The characteristics of a highly sensitive express stand of non-linear-optical diagnosis of crystalline structures such as sphalerite by generation of the second harmonica are presented. The analysis of quantitative and qualitative characterization capabilities was carried out using the stand of features of crystalline parameters of layers of heteroepitaxial structures cdhHg1-xTe on substralis from GaAs with orientation (013). The results were obtained by deviations of orientation in layers from the orientation of the substrate, which arose during the epitaxy, to determine the existence of stresses. The high sensitivity of the stand revealed the presence/absence of micro-particles with a disordered crystalline structure. Experimental results of reversible modification of the "in situ" crystalline state of CdxHg1-xTe structures with short-term local radiation exposure of high power laser radiation are given. New experimental data have been presented showing that the components of the nonlineaic susceptibility tensor cxyz(w) of the crystalline structure of CdxHg1-xTe depend on composition and are an order of magnitude larger than similar components of tensor in CdTe and GaAs.

A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination.

The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle θ) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the orientationof the GaAs substrate and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle θ was observed when growing the upper graded widegap MCT layer. The absolute value of the angle θ can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers