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A three‐dimensional photonic crystal based on an opal–AgI composite was fabricated using a high‐pressure melt technique. It is shown that the semiconductor–superionic conductor phase transition in AgI controls electronic and optical properties of the composite. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.