Fabrication and structural studies of opal-III nitride nanocomposites

Abstract

In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

InN, latest development and a review of the band-gap controversy

“…InN may consequently have considerable advantages from the photonic device perspective and the problems of material quality are not currently a barrier for development; nor are the arguments related to the bandgap an impediment to the development of InN-based photonic devices. We can therefore conservatively ascribe a bright future to research in this area, continuing the preliminary photonic band-gap work already undertaken [52][53][54].…”

Synthesis, properties, and model of the formation of silica supramolecular structures

“…Silica spherical par ticles are known to be secondary compositions [1,10], which are composed of smaller particles (Fig. 3).…”

“…SEM image of the surface of an opal matrix composed of spherical silica particles of size 220 nm after etching with HF[10].…”

Synthesis of precious opal in a hydrothermal solution

“…It is known that spherical silica particles are secondary aggregates [14] and consist of smaller particles. However, our data on the sedimentation suggest that there is one more aggregation level.…”