Mathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil atoms in the second range have a higher energy, which enables these atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n - and p -4 H -SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.

Formation of metal nanoparticles on silicon substrate by thin gold film irradiation with accelerated atomic and molecular ions is shown. Structures obtained were etched by metal-assisted catalytic chemical technique to get porous silicon structure. Size of gold nanoparticles and the structure of porous siliconstrongly depend on kind of incident species and ion dose. A local increase in the energy release density at the target surface that takes place during molecular ion bombardment significantly reduce the doses required for the formation of predetermined film morphology and the distribution of nanoparticles on the surface, while at the same time molecules exhibit lower radiation effect on the substrate. Luminescent properties of porous silicon do not depend on the kind of ion used, and can be tuned by composition of an etching solution