Electron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding 67Zn nuclei, proving that it is a shallow, effective-mass-like donor. In addition D1 exhibits a single interaction with a H nucleus ( a(H) = 1.4 MHz), thus H is the defining element. It is in agreement with the prediction of Van de Walle [Phys. Rev. Lett. 85, 1012 (2000)] that H acts as a donor in ZnO. The concentration of D1 is 6x10(16) cm(-3) emphasizing its relevance for carrier statistics and applications.
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-28 SiC) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100 nT/ √ Hz within a volume of 3 × 10 −7 mm 3 at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm 3 the projection noise limit is below 100 fT/ √ Hz.
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