Presented results of active resistance frequency dependence measurements of a circular cross-section aluminum and copper conductors with a various diameter in a wide frequency range from 20Hz to 2MHz. Using the skin effect simulation we show that for all types of wires an increased active resistance observed, compared to the theoretical values in the frequency range above 200 kHz, where the skin layer thickness becomes less than 200 μm. This phenomenon may be associated with the manufacturing process of a metal wire by drawing through a die, when defects are formed in the near-surface layer, leading to its increased resistivity.

A set of GaAs whisker crystallites in the shape of hexagonal prism with the axis along the [111] direction have been modeled as well as constructions consisting of such prisms. For these model samples XRD patterns have been calculated. Basing on the calculated XRD pattern analysis, a fitting configuration of prismatic fragments has been built for an atomic array obtained with the help of applying molecular dynamics techniques to the initial model prismatic GaAs crystallite.

Using molecular dynamic technique modelling of nanoindentation of GaAs (001) surface terminated with As atoms to the depth up to 1 nm in the range of temperatures from 1 K to 15 K was carried out. It was shown that it results in to the reconstruction of a surface with formation of stable As dimers (1x2), which do not disappear after withdraw of the indenter from the surface.