Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.

The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2-1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.