Поступило в Редакцию 5 марта 2018 г.Предложены условия плазменного распыления эпитаксиальных систем PbSe/CaF 2 /Si(111) в высокоплотной аргоновой плазме высокочастотного индук-ционного разряда низкого давления, при которых на поверхности пленок селе-нида свинца формируются субмикронные полые структуры свинца. Обработка проводилась при низкой энергии ионов Ar + (20−30 eV), близкой к пороговой энергии распыления, при временах обработки 60−240 s. С помощью методов электронной микроскопии и локального энергодисперсионного рентгеновского анализа описаны свойства получаемых объектов. Показано, что размеры струк-тур, их форма и поверхностная плотность изменяются в широких пределах и определяются временем плазменной обработки и температурой поверхности. Рассматриваются физические процессы, приводящие к формированию ансамбля полых частиц свинца в процессе плазменного распыления.

The effect of ion-plasma treatment on the physical properties of the surface of GaTe crystals is investigated. Gallium telluride crystals were grown by vertical zone melting under the pressure of an inert argon gas of 10.0 MPa at a temperature of 1000 °C and a zone displacement velocity of 9 mm/hr. The treatment was carried out in argon plasma in a high-density low-pressure radio frequency (RF) inductively coupled plasma reactor at an argon ion energy of 100-200 eV for 15-120 s. Using scanning electron microscopy methods, it was shown that the formation of nano- and submicron structures of various architectures (nanohillocks, nanocones, droplet structures) occurred on the surface during processing. It is shown that the sputtering processes are accompanied by enrichment of the near-surface layer with metal atoms and a decrease in oxygen content. The formation of nano- and submicron gallium droplets on the surface has been proved by X-ray diffractometry. The analysis of the raman scattering spectra showed a decrease in the oxide phases of tellurium after plasma treatment. It is established that modification of the GaTe surface leads to suppression of specular optical reflection in the range of 0.4-6.2 eV.

Raman scattering spectra of 1-2 µm thick n-PbS(111) epitaxial films grown by molecular beam epitaxy on BaF2(111) substrates were obtained and analyzed. The spectra were recorded at a low excitation level of 0.36 mW/µm2, which did not cause photo- and thermal degradation of the films. It is shown that, in accordance with the symmetry selection rules, the bands in the spectra correspond to overtone or combination tones of phonon modes of PbS at special points of the Brillouin zone. The analysis of the bands of oxides and oxysulfates of lead, which can mask the bands of lead sulfide, was carried out. The obtained data were used in the analysis of the recorded Raman scattering spectra by epitaxial films of a ternary solid solution PbS0.5Se0.5.