It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-structured Si(100) or Si(113) substrates with a V-shaped or U–shaped surface profile, respectively.
The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-structured substrate.
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