http://arxiv.org/abs/1310.0969 The authors acknowledge helpful discussions with T. Brauner, R. Grill, M. Grynberg, A. A. Nersesyan, V. Novák, M. L. Sadowski and W. Zawadzki. The work has been supported by the ERC project MOMB, by EuroMagNET II under the EU Contract No. 228043, by the GDR-I project 'Semiconductor sources and detectors of THz frequencies' and by the Scientific Council of Montpellier II University. We also acknowledge the support received from the Ambassade de France en Russie for the French-Russian collaboration and exchange of PhD students.International audienceSolid-state physics and quantum electrodynamics, with its ultrarelativistic (massless) particles, meet in the electronic properties of one-dimensional carbon nanotubes, two-dimensional graphene or topological-insulator surfaces. However, clear experimental evidence for electronic states with a conical dispersion relation in all three dimensions, conceivable for certain bulk materials, is still missing. Here, we study a zinc-blende crystal, HgCdTe, at the point of the semiconductor-to-semimetal topological transition. For this compound, we observe three-dimensional massless electrons, as certified from the dynamical conductivity increasing linearly with the photon frequency, with a velocity of about 106 m s−1. Applying a magnetic field B results in a -dependence of dipole-active inter-Landau-level resonances and spin splitting of Landau levels also following a -dependence--well-established signatures of ultrarelativistic particles but until now not observed experimentally in any solid-state electronic system

22 pages, 12 figures, review paperInternational audienceResonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics