GaInPAs/InP heterostructures grown by low pressure (0.1 bar, 600 oC) metal-organic chemical vapor phase deposition were investigated. The thicknesses of grown GaInAsP layers were about 1 µm. For the epitaxial layers Ga<sub>1-x</sub>In<sub>x</sub>P<sub>1-y</sub>As<sub>y)</sub> with average compositions of x = 0.77 – 0.87 and y = 0.07 – 0.42 the variation of V group elements content y with the epilayer depth were revealed, weher the compositions of V-group elements were changed up to Δy = 0.1 atomic fractions in V group elements sublattice. In most cases, y change occurs in a GaInAsP region up to 200 nm thick adjacent to the InP. In some cases, y changes throughout the whole GaInPAs layer thickness. Fo the epitaxial layers with a satisfactory crystal perfection the less was the mismatch between the substrate and the GaInPAs epitaxial layer, the smaller was the value of Δy. For GaInPAs layers characterized by a low degree of crystal perfection and a high lattice mismatch between GaInAsP and InP layers, the value of Δy was about zero. These data let us suggest that the incorporation of atoms of the V group in the epitaxial layer strongly depends on elastic deformation of the growing monolayer, that is mismatched with the underlying crystal surface.
С использованием технологии прерывистого напыления на поверхности монокристаллической подложки MgO(001) изготовлены гетероструктуры BiFeO3/(Sr, Ba)Nb2O6. Проведены исследования структуры, профиля состава по толщине, морфологии поверхности и диэлектрических характеристик материалов. Установлено, что несмотря на формирование двух типов ориентационных доменов (±18.4o) в слое (Sr, Ba)Nb2O6, верхний слой BiFeO3 находится в соотношении полной параллельной ориентации с подложкой MgO(001). Показано, что состав пленок феррита висмута и ниобата бария-стронция по толщине пленки не изменяется, соответствует составам распыляемых керамических мишеней, признаков наличия буферных слоев не выявлено. Представлены результаты исследования диэлектрических и сегнетоэлектрических характеристик гетероструктуры. Обсуждаются причины выявленных закономерностей. Ключевые слова: тонкие пленки, гетероструктура, ниобат бария-стронция, феррит висмута.
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