We propose a method for the formation of porous germanium ( P -Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag^+ ions into single-crystalline germanium ( c -Ge). This is demonstrated by implantation of 30-keV Ag^+ ions into a polished c -Ge plate to a dose of 1.5 × 10^17 ion/cm^2 at an ion beam-current density of 5 μA/cm^2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c -Ge surface led to the formation of a P -Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ∼10–20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag^+ ion implantation is accompanied by effective sputtering of the Ge surface.

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Low-energy ( E = 30 keV) Ag^+ ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10^15 to 1.5 × 10^17 ions cm^–2 and an ion beam current density varying from 2 to 15 μA/cm^2. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10^15 ions cm^–2), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10^17 ions cm^–2, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

Настоящее исследование относится к способам изготовления дифракционных оптических элементов (дифракционных решеток). Дифракционная решетка была получена на основе алмаза при его имплантации ионами бора через маску. В процессе имплантации в немаскированных областях облучаемого алмаза произошла графитизация алмаза, приведшая к распуханию облученного слоя. Формирование периодических поверхностных графитизированных микроструктур на поверхности алмаза контролировалось методами оптической, электронной и атомно-силовой микроскопии. Эффективность функционирования дифракционного оптического алмазного элемента показана путем его зондирования излучением гелий-неонового лазера. DOI: 10.21883/PJTF.2017.02.44185.16385