Thinˆlms of Ni Cr oxide were prepared by magnetron sputtering of NiO Cr 2 O 3 (1 : 1 mol ratio) target in a gas mixture of oxygen and argon. The dependence of the partial pressure ratio R of oxygen to the toal sputtering gas on the compositional, optical and electrical properties of theˆlms was investigated from a standpoint of an application to the infrared sensor. With increasing R, the Ni(220) peak of XRD increases, the optical bandgap decreases and the dc conductivity s as well as the thermistor coe‹cient B th increases. It is found that a set of relatively high values of s and B th for the infrared sensor is obtained in the range of R around 10.

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SiC:Hˆlms have been deposited by reactive rf magnetron sputtering of Si target in helium and methane (diluted by argon) gas mixtures. The eŠects of helium partial pressure ratio R on the structural, optical and electrical properties of theˆlms were investigated. With increasing R above 75, both the optical bandgap and the concentration of hydrogen bonded to silicon atoms decreas, and the dark conductivity increases rapidly. These data imply that the nanocrystallization of SiC:Hˆlms could be attained by introducing hellium in the sputtering process.