：To improve the resistance of long wave infrared (LWIR) band antireflective films on Ge in harsh environments, film design and fabrication technology have been discussed using LaF 3 as a low refractive index material. We fabricated high-performance multilayer antireflection (AR) coatings in an LWIR band (8-12 m) via an optimized film structure and sectional preparation of LaF 3 layer on Ge substrate. The peak transmittance was 98.3%, and the average transmittance increased from 48.4% to 96.2% when double-sided coating was used. This LWIR AR coating with LaF 3 passed various environmental, durability, and mechanical properties tests while maintaining good optical properties. Key words：LaF 3 ，long wave infrared band，high performance antireflective film

：Infrared technologies provide tremendous value to our modern-day society, in the fields of remote sensing, imaging, metrology, product inspection, environmental monitoring, and biomedical diagnostics. The demand for the third-generation infrared photodetectors, to enable easy-to-fabricate, low-cost, and tunable infrared active optoelectronic materials, has driven the development of infrared colloidal quantum dots (CQDs). This review introduces the preparation methods of infrared CQDs and development of infrared CQD detectors, and lists the representative research results of CQDs in the field of optoelectronics. Finally, the infrared quantum dot photodetectors are summarized, and several research problems are proposed. The results of this study guide the commercialization of the infrared quantum dot detector.