The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method. The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually. The maximum photovoltage is about 13.7 mV at T = 80 K. The maximum photovoltage decreases with temperature increasing, which is attributed to the stronger thermal fluctuation. A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed, which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.

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Based on density functional theory calculations, the electronic and magnetic properties of Co-doped SnO are investigated. It is found that the spin-polarized state, with a magnetic moment of about 1.0 µ B per Co-dopant, is more favorable in energy than the non-spin-polarized state. Moreover, the origin of the ferromagnetism in Co-doped SnO is found to be the double exchange mechanism. Our results indicate that Co-doped SnO is a possible candidate of the p-type spintronics material.