No abstract

Liu Zi-Yang( ), Zhang Jin-Cheng( ) † , Duan Huan-Tao( ), Xue Jun-Shuai( ),Lin Zhi-Yu( ), Ma Jun-Cai( ), Xue Xiao-Yong( ), and Hao Yue( )

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with τ T = (0.5 − 6) ms and D T = (1 − 5)×10 13 cm −2 • eV −1 . Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ T(f) = (0.2 − 2) µs and slow with τ T(s) = (0.5 − 6) ms. The density of trap states evaluated on the EHEMTs isfor the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.

Xiao-Hua(马晓华) a)b) † , Ma Ji-Gang(马骥刚) a) , Yang Li-Yuan(杨丽媛) b) , He Qiang(贺 强) a) , Jiao Ying(焦 颖) a) , Ma Ping(马 平) a) , and Hao Yue(郝 跃) b)

Xiao-Hua( ) a)b) , Jiao Ying( ) a) , Ma Ping( ) a) , He Qiang( ) a) , Ma Ji-Gang( ) a) , Zhang Kai( ) b) , Zhang Hui-Long( ) a) , Zhang Jin-Cheng( ) b) , and Hao Yue( ) b)