A dielectric barrier discharge in Ar and CH 4 gas mixtures used for a-C:H film deposition was investigated. The number densities of Ar(1s 2: resonant level) and Ar(1s 3, 5 : metastable levels) atoms were measured using a high sensitive detection method based on plasma modulation and laser absorption spectroscopy. The CH(X 2 Π) radical number density was measured by an actinometry method. The excitation transfer process from the Ar(1s 5 ) atom to the CH(A 2 ∆) radical was detected by a laser collisionally induced fluorescence method. The a-C:H film properties (the content of sp 3 and sp 2 hybridization and the content of the CH 3 and CH 2 hydrocarbon groups) were correlated with the number densities of the Ar(1s 5 ) atom and the CH(X 2 Π) radical.In the a-C:H film, maximum value of the sp 3
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