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Background: This study was designed to compare the antiemetic effects of propofol, ondansetron, droperidol and metoclopramide for the prevention of postoperative nausea and vomiting (PONV) in patients undergoing middle ear surgery.Methods: One-hundred-twenty patients were scheduled for middle ear surgery (tympanomastoidectomy and tympanoplasty). Patients received propofol (0.5 mg/kg), ondansetron (60μg/kg), droperidol (20μg/kg) or metoclopramide (0.2 mg/kg) intravenously at the end of the surgical procedure. The assesment of PONV was performed during 3 periods after receiving anesthesia; 0 to 2 hours in the postanesthetic care unit, 2 to 12 hours and 12 to 24 hours in the ward.Results: The percentage of no emesis during the 0 to 2 hour period after receiving anesthesia was 93% for the those who received propofol, 73% for the those who received ondansetron, 70% for the those who received droperidol, and 70% for the those who received metoclopramide. The respective corresponding incidence during the 2 to 12 hour period after receiving anesthesia was 86%, 66%, 63%, and 63%, and the respective corresponding incidence during the 12-24 hour period after receiving anesthesia was 90%, 66%, 66%, and 66%. No clinically adverse events were observed in any of the groups.Conclusions: A small dose of propofol is a better antiemetic than ondansetron, droperidol or metoclopramide for prevention of postoperative nausea and vomiting after middle ear surgery.

In 2 O 3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and 400 o C. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-400 o C, the intensities of the In 2 O 3 (222) major peak increased and the full width at half maximum (FWHM) of the In 2 O 3 (222) peak decreased due to the crystallization. The films annealed at 400 o C showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at 400 o C showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of 89 Ω/□. The figure of merit reached a maximum of 7.2 × 10 −4 Ω −1 for the films annealed at 400 o C. The effect of the annealing on the work-function of In 2 O 3 films was considered. The work-function obtained from annealed films at 400 o C was 7.0eV. Thus, the annealed In 2 O 3 films are an alternative to ITO films for use as transparent anodes in OLEDs.

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