0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography

Vorbringer-Doroshovets, Nataliya; Balzer, Felix; Fuessl, Roland; Manske, Eberhard; Kaestner, Marcus; Schuh, Andreas; Zoellner, Jens-Peter; Höfer, Michael; Guliyev, Elshad; Ahmad, Ahmad; Ivanov, Tzvetan; Rangelow, Ivo W.

doi:10.1117/12.2012324

Cited by 14 publications

(19 citation statements)

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“…When using a top-scanner system like we prefer for our own SPM systems, that fact introduces a lot of engineering challenges and limits the performance of the system, especially for high speed and high precision metrology applications. 20 Thus, cantilever with alternative read-out principles like piezoresistive probes are promising candidates for further miniaturization and improvements, discussed in chapter III.…”

Section: Miniaturization Of Optically Detected Cantileversmentioning

confidence: 99%

Scanning probes in nanostructure fabrication

Kaestner

Ivanov

Schuh

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inMechanical properties of polymeric nanostructures fabricated through directed self-assembly of symmetric diblock and triblock copolymers J. Vac. Sci. Technol. B 30, 06F204 (2012); 10.1116/1.4766916 Development, analysis and control of a high-speed laser-free atomic force microscope Rev. Sci. Instrum. 81, 023707 (2010);Scanning probes have enabled modern nanoscience and are still the backbone of today's nanotechnology. Within the technological development of AFM systems, the cantilever evolved from a simple passive deflection element to a complex microelectromechanical system through integration of functional groups, such as piezoresistive detection sensors and bimaterial based actuators. Herein, the authors show actual trends and developments of miniaturization efforts of both types of cantilevers, passive and active. The results go toward the reduction of dimensions. For example, the authors have fabricated passive cantilever with a width of 4 lm, a length of 6 lm and thickness of 50-100 nm, showing one order of magnitude lower noise levels. By using active cantilevers, direct patterning on calixarene is demonstrated employing a direct, development-less phenomena triggered by tip emitted low energy (<50 eV) electrons. The scanning probes are not only applied for lithography, but also for imaging and probing of the surface before and immediately after scanning probe patterning. In summary, piezoresistive probes are comparable to passive probes using optical read-out. They are able to routinely obtain atomic step resolution at a low thermal noise floor. The active cantilever technology offers a compact, integrated system suited for integration into a table-top scanning probe nanolithography tool.

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Section: Miniaturization Of Optically Detected Cantileversmentioning

confidence: 99%

Scanning probes in nanostructure fabrication

Kaestner

Ivanov

Schuh

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Self Cite

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“…Typically, the same tool and cantilever are used for both reading as well as writing of the nanofeatures. 7,[16][17][18][19][20][21] For demonstration of the large process window applicability, the patterning tone was switched in between the single step patterns. In that manner, the "SNM-TU Ilmenau" logo pattern was created step by step/letter by letter.…”

Section: Patterning Demonstrationsmentioning

confidence: 99%

“…In such a way, the exposure dose, which is a function of the current set point and velocity of the probe, can be exactly controlled. [16][17][18][19][20][21] In lithography, the sample is biased using an external high voltage, low noise source. Both modes (imaging and lithography) can be dynamically switched in a fast way allowing a sequential imaging/patterning cycle-based procedure shown exemplarily in Sec.…”

Section: Scanning Probe Lithography Platformmentioning

confidence: 99%

“…1,2,[16][17][18][19][20][21] Herein, a high nonuniform electric field, which causes a current of low energy electrons between the tip and sample, is applied for direct patterning of the calixarene resist. These low energy electrons (<50 eV), field emitted from the scanning probe tip apex (preliminary simulations provided in Ref.…”

mentioning

confidence: 99%

“…By using the direct removal process, no development steps featuring higher resolution capabilities are required. [16][17][18][19][20][21] In both lithographic tones, AFM imaging directly after exposure using the same tool and cantilever allows the inspection of the generated features enabling a closed-loop lithography scheme. 18 Moreover, we have shown sub-5-nm pattern capability of line and dot features, 2,7,16,20 throughput enhancement by combining electric field, current-controlled SPL with electron/EUV lithography, 7 as well as the practical application for pattern transfer by plasma etching.…”

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confidence: 99%

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