0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Vasjanov, Aleksandr; Barzdėnas, Vaidotas

doi:10.3390/electronics9010133

Cited by 4 publications

(5 citation statements)

References 28 publications

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“…So it limits the bandwidth. The same constraint is true for [9] as there is an additional capacitance at the cascode node which limits the bandwidth. In [14], this parasitic capacitance is mitigated by the help of a series inductor at cascode node, but probably its other design parameters prevent the bandwidth from reaching the upper frequency limit.…”

Section: Design Proceduresmentioning

confidence: 99%

See 1 more Smart Citation

A Distributed Power Amplifier Design with a High Power Gain

Amiri

Joodaki

Forouzanfer

et al. 2020

2020 28th Iranian Conference on Electrical Engineering (ICEE)

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In this paper we present a simple while comprehensive analytical design procedure for distributed amplifiers. Distributed amplifiers are attractive for designers due to their wideband capability. When designing a distributed amplifier, the first question that comes to mind is how wide the bandwidth can be. This paper answers this question by using the self-matching and low-pass properties of a distributed amplifier. Self-matching property of a distributed power amplifier is an interesting point that distinguishes it from other types of power amplifiers that are usually based on input and output matching networks. Here the estimation of the bandwidth of a distributed amplifier structure is discussed. The equations that are used in this paper can bring good insight and they can assist designers. Furthermore, we have explained the frequency behavior of a tapered distributed amplifier analytically for the first time. In order to validate the approach presented here, we have used published designs including our previously published design as practical examples. The flowchart of the design procedure is also provided.

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Section: Design Proceduresmentioning

confidence: 99%

“…This means that the wideband performance of DAs comes at a price. Consequently, in practice, non-uniform and unconventional DA designs are usually implemented [9][10][11][12]. A common way of increasing efficiency of a DA is the tapering technique.…”

Section: Rementioning

confidence: 99%

A Distributed Power Amplifier Design with a High Power Gain

Amiri

Joodaki

Forouzanfer

et al. 2020

2020 28th Iranian Conference on Electrical Engineering (ICEE)

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show abstract

“…The gate parasitic capacitance and the transmission line connected in series between the two gate transistors form a gate artificial transmission line structure, as shown in Fig. 2, the drain artificial transmission line is the same, and the characteristic impedance of the transmission line is usually 50Ω [16]. Therefore, the parasitic capacitance is no longer a factor that limits the bandwidth, and the cascaded structure of the multi-stage low-pass filter of the artificial transmission line can theoretically achieve infinite bandwidth.…”

Section: Theoretical Basis Of Distributed Circuitsmentioning

confidence: 99%

“…In addition to being related to the selected transistor, the cut-off frequency is also related to the inductance of the transmission line used for matching [16,18,19]. The principle of equal phase speed of the gate and drain transmission lines are usually followed during design, so signals can be superimposed in the same direction on the drain transmission line.…”

Section: Theoretical Basis Of Distributed Circuitsmentioning

confidence: 99%

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

Nan

Liu

Cong

et al. 2023

IEICE Electron. Express

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Based on the self-developed standard process RF-LDMOS device, a new ultra-wideband RF power amplifier is designed in this letter. The amplifier removes the absorbing resistor and capacitor series structure at the end of the drain. The stability of the circuit is enhanced by the pre-matching circuit. Considering the small impedance value of the RF high-power device, it is difficult to achieve broadband matching. The novel tapering drain transmission has been developed which overcomes the distributed amplifier's limitations of low power and efficiency. Ultrawideband RF amplifier has excellent output power and efficiency. The measurement results show that from 0.8-2.2GHz, under the condition of 28V power supply, the saturated output power is 43dBm (20W), the power gain is 10dB, the drain efficiency is about 30%-50%; The peak-to-average ratio is 8dB, and the ACPR is less than -41dBc when the linear output is 5W, proving the effectiveness of the new tapered drain structure to achieve broadband.

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“…Distributed amplification structure is used in many broadband applications such as microwave amplifiers [1], microwave oscillators [2], a microwave switches [3]. So, most wireless, mobile, satellite, optical, and radar systems need it [4][5][6][7][8]. Although the most important determinant of gain and bandwidth in microwave and RF amplifiers are transistor technology, and the product of gain in bandwidth (GBP) is constant, the physical environment of the transistors (design) affects and limits the practical gain and bandwidth of amplifiers [9].…”

Section: Introductionmentioning

confidence: 99%

An Enhanced Design of Cascaded Single-Stage Distributed Amplifiers Utilizing Quasi-Differential Amplifier Cells

Saeed,

Kareem,

Hameed

2023

MMEP

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Cascaded Single-Stage Distributed Amplifiers (CSSDAs) are instrumental in achieving ultra-wideband amplification for microwave applications due to their significant gainbandwidth products. However, their functionality is often compromised by internal noise, which detrimentally impacts the linearity of the response. An innovative solution to this prevalent issue is presented in this study through the introduction of the Quasi-Differential Distributed Amplifier (QDDA). Implementing the 0.18μm Complementary Metal Oxide Semiconductor (CMOS) technology, a QDDA with a single-stage fourcascade configuration was designed, fabricated, and tested. The empirical results revealed a high gain of 20dB and an extensive bandwidth of 30GHz. Moreover, the noise figure was observed to be 4.809 with a compact chip size of 0.74mm² . This design and the resulting findings were accomplished using the Advanced Design System (ADS) RF simulator. The circuit layout and specifications were subsequently generated using the Cadence tool. This research demonstrates the potential of the QDDA to significantly enhance the performance of CSSDAs, contributing to the advancement of ultra-wideband microwave applications.

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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Cited by 4 publications

References 28 publications

A Distributed Power Amplifier Design with a High Power Gain

A Distributed Power Amplifier Design with a High Power Gain

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

An Enhanced Design of Cascaded Single-Stage Distributed Amplifiers Utilizing Quasi-Differential Amplifier Cells

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