0.18&amp;#x00B5;m SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs R&lt;inf&gt;on&lt;/inf&gt; &amp;#x00D7; C&lt;inf&gt;off&lt;/inf&gt; switch performance

Moen, Kurt A.; Preisler, Edward; Hurwitz, P.; Zheng, Jie; McArthur, W.; Racanelli, M.

doi:10.1109/bctm.2015.7340562

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM 2015

DOI: 10.1109/bctm.2015.7340562

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0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs R<inf>on</inf> × C<inf>off</inf> switch performance

Kurt A. Moen¹,

Edward Preisler²,

P. Hurwitz³

et al.

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Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

Phillips¹,

Preisler²,

Zheng³

et al. 2021

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs R<inf>on</inf> × C<inf>off</inf> switch performance

Cited by 2 publications

References 6 publications

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R_onx C_offSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions

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0.18&#x00B5;m SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs R<inf>on</inf> &#x00D7; C<inf>off</inf> switch performance

Cited by 2 publications

References 6 publications

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs Ronx CoffSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions

Contact Info

Product

Resources

About

0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs R<inf>on</inf> × C<inf>off</inf> switch performance

0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R_onx C_offSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions