0.2 Micron length T-shaped gate fabrication using angle evaporation

Chao, P.C.; Ku, W.H.; Smith, P.M.; Perkins, William H.

doi:10.1109/edl.1983.25671

Cited by 20 publications

(16 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3][4][5] Several attempts have been made to improve the characteristics of nickel silicides. Ohguro et al 6 and Hou et al 7 showed that the junction leakage current of nickel-silicided junctions could be reduced by using Ti and TiN capping layers, respectively. It was found that the incorporation of nitrogen into Ni films improves the roughness of the silicide/Si interface.…”

mentioning

confidence: 99%

Effect of a Mo Interlayer on the Electrical and Structural Properties of Nickel Silicides

Choi

Seong

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

The effect of a Mo interlayer on the electrical properties and thermal stability of nickel silicides was investigated. It is shown that the samples with the interlayer produced lower sheet resistances than did the samples without the interlayer, for annealing temperatures in the range 400-800°C. Glancing angle X-ray diffraction results show that NiSi is transformed into NiSi2 at temperatures in excess of 700°C, at which a tetragonal MoSi2 phase is also formed. It is also shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°C. Transmission electron microscopy and scanning electron microscopy results show that the insertion of the interlayer was effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface. © 2003 The Electrochemical Society. All rights reserved.

show abstract

mentioning

confidence: 99%

Effect of a Mo Interlayer on the Electrical and Structural Properties of Nickel Silicides

Choi

Seong

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Several attempts have been made to prevent oxygen contamination in the Ni-silicidation process. Ohguro et al 6 and Hou et al 7 reported that the junction leakage current in Ni-silicide junctions due to the oxidation of NiSi films can be reduced by the introduction of Ti and TiN capping layers, respectively. Although the Ti and TiN capping techniques were shown to have similar effects on the Nisilicidation process, the mechanisms involved were different from each other.…”

mentioning

confidence: 99%

Effects of Hydrogen Implantation on the Structural and Electrical Properties of Nickel Silicide

Choi

Hullavarad

et al. 2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

The effects of hydrogen implantation on the structural and electrical properties of nickel silicide have been investigated. Ni films (30 nm) are electron-beam-evaporated on Si substrates, after which plasma immersion ion implantation is used to introduce hydrogen ions into the Ni films at an energy of 350 eV to a dose of 1×1016 cm−2. For nickel silicidation reactions, rapid thermal annealing is carried out in the range of 400-750°C for 30 s in a nitrogen atmosphere. It is shown that the implanted samples produce lower sheet resistances than the unimplanted samples across the whole annealing temperature range. X-ray diffraction results show that, regardless of the hydrogen implantation, NiSi is transformed into NiSi2 at temperatures in excess of 700°C. X-ray photoemission spectroscopy results show that the hydrogen implantation plays a role in reducing the nickel oxide layer. Compared to the unimplanted samples, the implanted samples exhibit better surfaces and uniform NiSi/Si interface morphologies. Transmission electron microscopy results show that the grain sizes of the implanted sample are smaller than those of the unimplanted sample. It is further shown that the implanted samples are thermally more stable than the unimplanted samples, which is attributed to the difference in the grain sizes of the nickel silicide films. © 2002 The Electrochemical Society. All rights reserved.

show abstract

“…3 To obtain a low gate resistance while still retaining a very short footprint, a T-shaped cross-section gate has been developed. 4,5 T-shaped gate fabrication using the multilayer resist process has been reported by many authors. [6][7][8] In this technique polymethylmethacrylate ͑PMMA͒ and its methacrylic acid copolymer ͑PMMA-MAA͒ are used as a low ͑LO͒ and high ͑HI͒ sensitive resists, respectively.…”

Section: Introductionmentioning

confidence: 99%