2018
DOI: 10.1109/tmtt.2017.2767593
|View full text |Cite
|
Sign up to set email alerts
|

0.3-THz SiGe-Based High-Efficiency Push–Push VCOs With > 1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
8
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 42 publications
(8 citation statements)
references
References 65 publications
0
8
0
Order By: Relevance
“…For shorter range applications, antennas can even be integrated on-chip [67] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [68], [69].…”
Section: ) Active Imagingmentioning
confidence: 99%
“…For shorter range applications, antennas can even be integrated on-chip [67] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [68], [69].…”
Section: ) Active Imagingmentioning
confidence: 99%
“…The circuit can deliver typical LO driving powers for mixers of 0 dBm up to a frequency of 350 GHz. Other methods of signal generation include the realization of integrated VCOs at such high frequencies [109]- [111]. Here, push-push oscillators operating at half the single-ended output frequency are favored.…”
Section: Toward Thz Radar Transceiversmentioning
confidence: 99%
“…For shorter range applications, antennas can even be integrated on-chip [39] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [40], [41].…”
Section: A Thz Imagingmentioning
confidence: 99%