0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Özdemir, Cenk Ibrahim; Koninck, Yannick De; Yudistira, Didit; Kuznetsova, Nadezda; Baryshnikova, Marina; Thourhout, Dries Van; Kunert, Bernardette; Pantouvaki, Marianna; Campenhout, Joris Van

doi:10.1109/ecoc48923.2020.9333310

Cited by 2 publications

(2 citation statements)

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“…NRE allows the nano-ridge (NR) to expand its volume outside of the narrow trench with the desired shape, controlled by the growth conditions [ 14 , 15 ], enabling fabrication of large-area devices. An optically pumped distributed feedback NR laser was previously demonstrated by imec [ 16 , 17 ], and, more recently, InGaP/GaAs NR HBTs [ 18 , 19 ], a NR waveguide detector [ 20 ], and GaAs NR p-i-n diodes [ 21 ] were reported. NRE is also explored for GaSb and InGaAs alloys [ 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

et al. 2021

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Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-organic vapor-phase epitaxy on 300 mm Si (001) wafers with a double trench-patterned oxide template, in an industrial deposition chamber. Aspect ratio trapping in the narrow bottom part of a trench results in a threading dislocation density below 106∙cm−2 in the device layers in the wide upper part of that trench. NRE is used to create larger area NRs with a flat (001) surface, suitable for HBT device fabrication. Transmission electron microscopy inspection of the HBT stacks revealed restricted twin formation after the InGaP emitter layer contacts the oxide sidewall. Several structures, with varying InGaP growth conditions, were made, to further study this phenomenon. HBT devices—consisting of several nano-ridges in parallel—were processed for DC and RF characterization. A maximum DC gain of 112 was obtained and a cut-off frequency ft of ~17 GHz was achieved. These results show the potential of NRE III–V devices for hybrid III–V/CMOS technology for emerging RF applications.

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Section: Introductionmentioning

confidence: 99%

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

et al. 2021

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“…The growth of III-V continued out of the trench using nano-ridge engineering to attain the desired geometrical NR shape above the oxide trench pattern [11][12][13]. Earlier, optically pumped lasing [14,15], photodetectors [10,16,17], and approaches for evanescent coupling to SiPho platforms [18] were demonstrated for these III-V NRs.…”

Section: Introductionmentioning

confidence: 99%

Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Ozdemir,

Koninck,

Patra

et al. 2024

J. Phys. D: Appl. Phys.

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We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase selective-area epitaxial growth in a 300-mm CMOS pilot line. Defects resulting from the metamorphic growth of III-V devices on Si make these devices susceptible to different leakage mechanisms at higher operating temperatures. For the high-temperature operation of complex photonics-electronics integrations, understanding the leakage mechanisms of the devices has critical significance. This will help to optimize designs promptly and ensure the reliability and longevity of such devices under extreme operating conditions. The photodetector devices exhibit dark currents below 1 pA, at room temperature and –1 V bias voltage, limited by the noise floor of the measurement setup. To resolve the different leakage mechanisms contributing to the dark current, the devices were measured at elevated temperatures and the results were cross-validated with device simulations. The devices exhibited very low dark currents, with a median below 0.1 nA at 195 °C, suggesting very high-quality material growth. Through device models, leakage mechanisms related to Shockley-Read-Hall (SRH) recombination at bulk volume defects are found to be the main factor contributing to the dark current. The surface SRH recombination is found to be limited, yet affecting the forward bias dark current due to the shortening of the diffusion paths of the majority carriers. Also, the device model shows that the actual dark currents at room temperature can be as low as 0.01 pA, more than 1-order lower than the measured levels. This study emphasizes the high quality of the III-V nano-ridge waveguide devices grown on Si, which can potentially expand the capabilities of silicon photonics platforms further.

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0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Abstract: We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA (1.36x10 -7 A/cm 2 ) at -1V bias and internal responsivities of 0.65A/W at 1020nm wavelength.

Cited by 2 publications

References 9 publications

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

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