0.7–1.8 GHz multiband digital polar transmitter using watt-class current-mode class-D CMOS power amplifier and digital envelope modulation technique for reduced spurious emissions
Abstract:A polar transmitter driven by digital input signals for envelope and phase is demonstrated, using a band-switching output resonator to achieve multiband operation. A new digital pulse width modulation algorithm is also shown to partially suppress spurious signals associated with the digital input envelope signal. The transmitter consists of a current-mode class-D (CMCD) CMOS power amplifier (PA), together with a buck converter with a dead-time generator for improved efficiency. The CMCD PA is tuned by band-swi… Show more
“… Linear PAE across linear output power for the proposed linearity enhancement techniques [ 116 , 118 , 119 , 121 , 123 , 124 , 129 , 132 , 133 , 134 , 135 , 136 , 137 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 ]. …”
Section: Figurementioning
confidence: 99%
“…A polar transmitter with a current-mode class D CMOS PA was presented by T. Nakatani et al ( 2013). This polar transmitter also consisted of a digital pulse width modulation (DPWM) algorithm that was employed to mitigate spurious signals linked with the digital input signal envelope [118]. DPMW was mainly employed to minimize the noises In the polar feedback technique, a local oscillator and a mixer are employed to attenuate and downconvert the output signal of the PA.…”
Section: Polar Feedback Techniquementioning
confidence: 99%
“…Figure 25. Linear PAE across linear output power for the proposed linearity enhancement techniques[116,118,119,121,123,124,129,[132][133][134][135][136][137][142][143][144][145][146][147][148][149][150].…”
Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.
“… Linear PAE across linear output power for the proposed linearity enhancement techniques [ 116 , 118 , 119 , 121 , 123 , 124 , 129 , 132 , 133 , 134 , 135 , 136 , 137 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 ]. …”
Section: Figurementioning
confidence: 99%
“…A polar transmitter with a current-mode class D CMOS PA was presented by T. Nakatani et al ( 2013). This polar transmitter also consisted of a digital pulse width modulation (DPWM) algorithm that was employed to mitigate spurious signals linked with the digital input signal envelope [118]. DPMW was mainly employed to minimize the noises In the polar feedback technique, a local oscillator and a mixer are employed to attenuate and downconvert the output signal of the PA.…”
Section: Polar Feedback Techniquementioning
confidence: 99%
“…Figure 25. Linear PAE across linear output power for the proposed linearity enhancement techniques[116,118,119,121,123,124,129,[132][133][134][135][136][137][142][143][144][145][146][147][148][149][150].…”
Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.
“…However, recently, CMOS power amplifiers are under vigorously study in hopes of reducing the overall unit cost of production of RF systems [7][8][9][10][11][12][13][14]. One of the many advantages of the CMOS power amplifier is that it can be integrated with digital control blocks and analog circuits to complete a fully integrated SoC [15,16]. Although the linearity and breakdown voltage of CMOS amplifiers are lower than those of HBT amplifiers, various techniques to overcome the weaknesses of the CMOS process have been studied.…”
In this work, we propose a balun embedded driver stage to enhance the bandwidth and minimize the chip size of a differential CMOS power amplifier. By removing the passive input transformer, the bandwidth and chip size are improved. The proposed driver stage acts as an input balun as well as the driver stage for the power stage. The proposed driver is composed of a cascade connected PMOS, an inductor, and NMOS to generate the differential output signal. For the function of the input balun, the gate of the PMOS is connected to the drain of the NMOS. To verify the feasibility of the proposed balun embedded driver stage, we design a differential CMOS power amplifier for 5-GHz IEEE 802.11n WLAN applications. The designed power amplifier is fabricated using the 180-nm SOI RF CMOS process. The measured 3-dB bandwidth is approximately 2.5 GHz. The chip size of the fully integrated power amplifier, including input and output matching networks and test pads, is 0.885 mm 2. The measured maximum output power is 20.18 dBm with a PAE of 10.16%.
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