0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits

Abstract

Alo.75Gao,25As/lno,2~Ga0.75As/G8As HIGFE P Technology for High Abstract Results are presented from the first submicron gate length Complementary Hetwostructure Insulated Gate Field Effect Transistor (C-HIGFET) devices and circuitls (n-and p-HIGFET gate lengths of 0.7 pm). Thils reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switchingpowerhquency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated. 12.6.4 334-1EDM 92

Complementary GaAs junction-gated heterostructure field effect transistor technology

“…While a number of approaches have been proposedfor GaAs complementary logic an epitaxially grown substrate for the following reasons. A JFET allows operation with low gate leakage up to 1 V, [1][2][3][4][5][6], new approaches are worthwhile if they offer the potential for improved speed or reduced power consumption. In the which is important in minimizing static power.…”