A novel gate dielectric, with nitrogen confined within the top 0.7nm of the oxide surface, has been demonstrated in a 0.18pm CMOS process.High nitrogen concentrations (>lo%), incorporated by remote plasma nitridation (RPN), are demonstrated to suppress boron penetration in 4.0nm gate dielectrics with no degradation in n-ch or p-ch mobility. Drive currents with the RPN oxide were equivalent to, or exceeded those obtained with an Si02 control. Various gate doping schemes were explored to quantify contributions of poly depletion and Rsd on device performance. It was found that poly depletion accounts for less than one-half of the drive current improvement when PMOS source/drain doping is increased. [ I ] [2] [3] [4] [5] [6] [7] [8] E Hasegawa et al , IEDM Tech Dig , p 327 (1995) H Momose et al , IEEE Trans Elec Dev , v ED-41, p 546 ( 1994) 2 Ma et al , IEEE Trans Elec Dev , ED-41, p 1364 (1994) M Luo et al,

No abstract

No abstract

Alo.75Gao,25As/lno,2~Ga0.75As/G8As HIGFE P Technology for High Abstract Results are presented from the first submicron gate length Complementary Hetwostructure Insulated Gate Field Effect Transistor (C-HIGFET) devices and circuitls (n-and p-HIGFET gate lengths of 0.7 pm). Thils reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switchingpowerhquency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated. 12.6.4 334-1EDM 92

No abstract