1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

Liu, J.; Xiao, Ming; Zhang, Y.; Pidaparthi, Subhash; Cui, Hao; Edwards, Andrew; Baubutr, Lek; Meier, Wolfgang; Coles, Charles; Drowley, Cliff

doi:10.1109/iedm13553.2020.9372048

Cited by 63 publications

(43 citation statements)

References 8 publications

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“…109 A recent example illustrates valuable robustness characteristics enabled by multidimensional device architectures where a GaN Fin-JFET was used as an avalanche GaN transistor. 78 Its avalanche current could flow either through the p-type gate or the n-type fin, depending on whether the gate was off or on. 110 With the gate on, GaN Fin-JFET shows a unique short-circuit capability at breakdown voltage, 105 and it fails with an open-circuit signature due to the spatial separation of electric field and current stresses, which is desirable for module and circuit safety.…”

Section: Discussionmentioning

confidence: 99%

“…41 The use of sub-micron fin channels in WBG JFETs has allowed for a shift from the D-mode to Emode operation. 77,78 As the fin dimension reduces in SiC Fin-JFETs, however, the sidewall ion implantation used for p-gate formation would degrade the channel mobility, which offsets the benefits of high channel density and results in a higher 𝑅 . This processing issue is not present for GaN Fin-JFETs due to their implantation-free fabrication.…”

Section: Finfet and Trigatementioning

confidence: 99%

“…44 In conjunction with the fin scaling, GaN fin channels can be doped 10 times higher than the drift region without impairing the E-mode operation, further lowering 𝑅 . An industrial vertical GaN Fin-JFET was demonstrated with an R ON,SP of 0.82 Ωꞏcm 2 and BV over 1700 V, 44,78 rendering the highest FOM in kilovolt-class transistors.…”

Section: Finfet and Trigatementioning

confidence: 99%

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Multidimensional device architectures for efficient power electronics

2022

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Power semiconductor devices are key to delivering high efficiency energy conversion in power electronics systems, which is critical towards efforts in reducing energy loss, cutting carbon dioxide emissions and creating more sustainable technology. While the use of wide or ultra-wide bandgap materials will be required in order to create improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures -such as superjunction, multi-channel and multi-gate technologies -can enable advances in the speed, efficiency, and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling, and material figure-of-merits of the architectures, and identify key technological challenges that need to be addressed in order to realize the full potential of the approach.

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Section: Discussionmentioning

confidence: 99%

Section: Finfet and Trigatementioning

confidence: 99%

Section: Finfet and Trigatementioning

confidence: 99%

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Multidimensional device architectures for efficient power electronics

2022

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“…4(b), an effective electric field shielding effect can be formed, thus eliminating the leakage path across the Schottky region. In the meantime, the reverse leakage current flows through the reverse biased pn junction to the ohmic contact on the p-GaN structure, which has been observed in experimentally fabricated vertical GaN Fin-JFETs [33], [34]. As a result, by optimizing the p-doping concentration, the reverse breakdown and leakage behavior of the MPS diodes can be equivalent to that of a pn diode instead of a conventional planar SBD, leading to a dramatic improvement in the reverse characteristics.…”

Section: A Reverse Characteristicsmentioning

confidence: 97%

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Wang

Chen

et al. 2022

IEEE J. Electron Devices Soc.

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In this paper, we systematically investigated the impact of the key structural parameters on the reverse and forward characteristics of gallium nitride (GaN) based vertical merged pn-Schottky (MPS) diode by numerical simulation. In comparison with conventional GaN-based vertical Schottky barrier diode, the MPS structure can suppress the high electric field at the Schottky interface with the inserted p-GaN, thereby enhancing the reverse breakdown characteristics. However, the adoption of the p-GaN structure can result in a locally crowded electric field at reserve bias condition and thus a premature breakdown of the device. Moreover, the p-GaN structure depletes the vertical channel region, which may degrade the onperformance at forward bias condition. We found that the doping concentration, width, and depth of the p-GaN structure are closely correlated with the electric field distribution at reverse bias and the channel resistance at forward bias, and thus determines the reverse and forward characteristics of the MPS diodes. The unique forward unipolar/bipolar characteristics of the MPS diode was also investigated and discussed systematically. The results can pave the way for the development of GaN power electronic devices towards a compact high-frequency and high-voltage power electronic system.

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“…GaN JFET avalanche ruggedness has been demonstrated recently. [59] Another design includes a p-GaN layer in the gating region. The primary reason for employing such a structure would be to provide normally off behavior.…”

Section: Avalanche Ruggedness and Reliabilitymentioning

confidence: 99%

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

Gupta

Pasayat

2022

Physica Status Solidi (a)

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Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are rapidly making inroads into the power semiconductor markets dominated by the incumbent silicon (Si). However, the performance of these WBG semiconductors has not reached the ideal material limits and thus, leaves significant room for improvement. In this regard, for medium voltage (600–1700 V)/high current (>50 A) applications, with a high Baliga figure of merit (BFOM) and architectural advantages, vertical GaN offers a highly energy‐efficient solution. Similarly, for high‐voltage applications (>1700 V), ultrawide bandgap (UWBG) semiconductors with their high BFOM present a strong case. Gallium oxide (Ga2O3) has emerged as the UWBG material for next‐generation power electronics. Together vertical GaN and vertical Ga2O3 have the potential to serve a large range of power switching applications. These technologies are both at different junctures and face different challenges to become commercially viable. Herein, a comprehensive review of all major vertical GaN and Ga2O3 power transistors is provided while discussing their features, advantages, and challenges that need to be solved. Finally, the critical material and device advancements that are needed to push these technologies further are also discussed.

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1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

Cited by 63 publications

References 8 publications

Multidimensional device architectures for efficient power electronics

Multidimensional device architectures for efficient power electronics

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

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1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

Cited by 63 publications

References 8 publications

Multidimensional device architectures for efficient power electronics

Multidimensional device architectures for efficient power electronics

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Vertical GaN and Vertical Ga2O3Power Transistors: Status and Challenges

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Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges