1.25 GHz – 3.3 GHz broadband solid state power amplifier for L and S bands applications

Abstract

<p>The research of a single stage broadband solid state power amplifier based on<br />ATF13876 transistor, which operates in the frequency ranging from 1.25 GHz<br /> - 3.3 GHz is presented in this paper. To achieve the broadband performance of<br />the operating bandwidth, a multi-section quarter wave impedance transformer<br />and an approximate transformation of previously synthesized lumped elements<br />into transmission lines are adopted. With neatly design of broadband matching<br />networks and biasing circuit, excellent matching performances and<br />unconditionally stability are achieved over the whole operating bandwidth<br />with a maximum gain of 17.2 dB. The large signal simulation shows that the<br />proposed circuit reaches a saturated output power of 18.12 dBm with a<br />maximum PAE of 27.55% and a 1-dB compression point at 5 dBm input power<br />level. Considering the wide frequency coverage, the features of the proposed<br />design compares favorably with the contemporary state-of-the-art.<br /><br /></p>

28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems

“…The active part of the VCO is composed of the two GaAs pHEMT transistors, T1 and T2, of gate length of 4*0.15 µm and width of 20 µm, and their bias elements, we have chosen transistors with a high number of fingers to increase the output power [9]. The performance of the active device, at the millimeter frequency, depends strongly on biasing conditions [16], the biasing of these transistors is provided by the two voltage sources Vds and Vgs of 2 V and 0.2 V respectively. While the inductance Lr as well as the two varactors T3 and T4 constitute the resonator.…”

Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance

“…There are several switch-mode amplifier structures such as class-E, D, F, and inverse class-F power amplifier have been introduced to archive high efficiencies. Each switchmode class has some advantages and disadvantages depending on the specific application [8]- [12]. For instance, the class-D power amplifier is suitable for audio and RF frequencies application.…”

Design of high power amplifier based on wilkinson power combiner for wireless communications

“…PA is the most important block that amplifies the RF signal to power the antenna and provides the highest possible gain with the lowest possible reflectance. There have been many studies on designing and manufacturing power amplifiers performed in different frequency bands [1]- [25] and solving issues such as: increase power and efficiency [3], [6]- [8], [12], [16], increase circuit bandwidth and reduce intermodulation distortion [1], [5], [9]- [11], [13]- [15], [17]- [25].…”