<p>The research of a single stage broadband solid state power amplifier based on<br />ATF13876 transistor, which operates in the frequency ranging from 1.25 GHz<br /> - 3.3 GHz is presented in this paper. To achieve the broadband performance of<br />the operating bandwidth, a multi-section quarter wave impedance transformer<br />and an approximate transformation of previously synthesized lumped elements<br />into transmission lines are adopted. With neatly design of broadband matching<br />networks and biasing circuit, excellent matching performances and<br />unconditionally stability are achieved over the whole operating bandwidth<br />with a maximum gain of 17.2 dB. The large signal simulation shows that the<br />proposed circuit reaches a saturated output power of 18.12 dBm with a<br />maximum PAE of 27.55% and a 1-dB compression point at 5 dBm input power<br />level. Considering the wide frequency coverage, the features of the proposed<br />design compares favorably with the contemporary state-of-the-art.<br /><br /></p>

A novel CPW Low pass filter structure using square complementary split ring resonator (CSRRs) is presented in this work. The CSRRs are etched periodically in each ground plane of the CPW line which permit to suppress the spurious response. The low pass filter shows a good rejection in the stop band. The cutoff frequency at-3dB is equal to fc = 5.28GHz. This filter has total area of 35.48x21.16 mm 2 .

This paper proposes the research of a single stage Broadband Solid State Power Amplifier (BPA) based on ATF13786 transistor, using GaAs process. This BPA operates in the frequency band ranging from 1.35 GHz to 3 GHz which covers the mainstream communication standards running in L and S Bands. The design approach is based on the real frequency technique. The simulated results are obtained by using ADS circuit simulator. In order to improve the broadband response, a multi-section quarter wave impedance transformer combined with an approximate transformation of a previously designed lumped elements into a transmission lines are used. The simulation results show a saturated output power of 17.85 dBm, with PAE of the 11% and a maximum power gain of 16.68 dB.

This chapter provides an insight view of the Broadband Power Amplifier (BPA) design. Basically, the aim of the BPA is to increase the power level of the signal presents at its input terminal up to a prefixed power level at its output terminal in the operating frequency band. The research of a GaAs single stage solid state broadband power amplifier based of ATF13876 which operates in the frequency band ranging from 1.17 GHz to 3 GHz is presented in this chapter. The wider bandwidth circuits are designed by using transmission lines which are intrinsically wideband circuits. With carefully designed biasing and broadband matching networks, unconditionally stability and excellent matching performance are fulfilled over the overall operating bandwidth with a maximum power gain of 17.34 dB and a saturated output power of 17 dBm. Considering the wider bandwidth of the proposed BPA, the latter compares favorably with the contemporary state-of-the-art.

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%. Electronics in Faculty of sciences and techniques, University Hassan 1st, Settat, Morocco. He is involved in the design of hybrid, monolithic active and passive microwave electronic circuits Ahmed Errkik was born in July 1960 in Morocco. He received the Ph.D. degree in physics from the University of Technology Compiegne (UTC), France. He is currently an associate Professor of physics in FST University Hassan 1st, Settat, Morocco. He is involved in the design of hybrid, monolithic active and passive microwave electronic circuits.Int J Elec & Comp Eng ISSN: 2088-8708  A trade-off design of microstrip broadband power amplifier for UHF applications (Mohamed Ribate) 927 Mohamed Latrach was born in Douar Ksiba, Sless, Morocco, in 1958. He received the Ph.D. degree in electronics from the University of Limoges, Limoges, France, in 1990. He is currently a Professor of microwave engineering with the Ecole Suprieure d'Electronique de l'Ouest (ESEO), Angers, France, where his research involves RF and microwaves. His field of interest is the design of hybrid, monolithic active, and passive microwave circuits, metamaterials, LH materials, antennas and their applications in wireless Communications. Ahmed Lakhssassi received the B.Eng. and M.Sc. in electrical engineering from University of Quebec à Trois-Rivières, Quebec, Canada in 1988 and 1990 respectively. He also received the Ph. D in Energy and Material sciences in 1995 from INRS-Energie et Matériaux, Quebec, Canada. His research interest is the fields of bio-heat thermal modeling. Also, his research interest is in Design of fully automated tool for porting analog and mixed signal circuits within different technology nodes.