1.27 µm metamorphic InGaAs quantum well lasers on GaAs substrates

Tångring, Ivar; Wang, S.; Sadeghi, Mahdad; Larsson, Anders

doi:10.1049/el:20060943

Cited by 29 publications

(17 citation statements)

References 8 publications

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“…The as-grown sample only reveals a weak PL emission peaked at 1.08 mm from the top InGaAs p-contact layer. The desired PL emission from the QW is at 1.29 mm and can be observed after the p-contact layer is removed, similarly to what the Ioffe group has observed [12]. The PL line width is 26 meV at low excitation but saturates at a large value of 55-60 meV at high excitations because of rough interfaces and alloy separation.…”

Section: Article In Presssupporting

confidence: 74%

“…We have shown that with a proper design and growth optimization, strong light emission at 1.3-1.6 mm can be realized from metamorphic InGaAs QWs [7,8]. Metamorphic lasers on GaAs have been reported, using both InAs QDs [9,10] and InGaAs QWs [11,12]. The first metamorphic QD lasers [9] were grown on step-graded InGaAsSb buffer layers and use stimulated emission at 1.3 mm from the first exited state.…”

Section: Introductionmentioning

confidence: 99%

“…The threshold current density for a 100 Â 1000 mm 2 cavity was 5 kA/cm 2 . Using alloy-graded buffer layer (GBL), we recently demonstrated 1.27 mm metamorphic InGaAs ridge waveguide lasers showing promising low-threshold current in the range of 60-100 mA for cavities with 4 mm wide ridge and 0.6-1.5 mm length [12]. In this paper we present more detail studies on molecular beam epitaxy (MBE) growth, material characterizations and device performance of 1.25-1.29 mm InGaAs metamorphic lasers.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Tångring

Wang

Sadeghi

et al. 2007

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Tångring

Wang

Sadeghi

et al. 2007

Journal of Crystal Growth

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“…Возможность успешной реализа-ции приборов с использованием такого подхода была продемонстрирована рядом научных групп. Например, для выращивания квантовых точек с длиной волны излучения вблизи 1500 нм на подложках GaAs с ме-таморфным переходным слоeм InGaAlAs [31,32], что в дальнейшем позволило реализовать эффективные ла-зеры с торцевым выводом излучения [33][34][35], для со-здания метаморфного туннельного перехода [36][37][38][39], метаморфных РБО на основе пары InGaAs/InAlAs [40], GaAs/AlAs [11,31,32,[41][42][43][44], GaAs/AlGaAs-слоев [45][46][47], а также GaAs/InGaAs-буфера [48,49].…”

Section: Introductionunclassified

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Бабичев¹,

Крыжановская²,

Моисеев³

et al. 2017

Физика И Техника Полупроводников

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Продемонстрирована возможность формирования гибридных метаморфных гетероструктур вертикально излучающих лазеров (ВИЛ) спектрального диапазона 1300 нм. Метаморфная полупроводниковая часть гетероструктуры с распределенным брэгговским отражателем на основе пары GaAs/AlGaAs и активной областью на основе квантовых ям InAlGaAs/InGaAs выращена методом молекулярно-пучковой эпитаксии на подложке GaAs(100). Верхнее диэлектрическое зеркало с распределенным брэгговским отражателем сформировано на основе пары SiO2/Ta2O5 методом магнетронного распыления. Проведено изучение спектров микрофотолюминесценции гетероструктур вертикально излучающих лазеров при комнатной температуре в диапазоне мощностей 0-70 мВт (длина волны оптической накачки составила 532 нм, диаметр сфокусированного пучка ~ 1 мкм). Наличие сверхлинейного хода зависимости интенсивности фотолюминесценции от мощности накачки наряду с заужением полуширины пиков фотолюминесценции и изменением модового состава могут быть обусловлены лазерной генерацией гетероструктуры вертикально излучающих лазеров. Полученные результаты свидетельствуют о возможности использования технологии метаморфного роста гетероструктур на подложках GaAs для создания вертикально излучающих лазеров спектрального диапазона 1300 нм. DOI: 10.21883/FTP.2017.09.44879.8557

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“…Z. Mi et al [9] achieved 1.52-m RT emitting laser using InAs QD grown on InGaAs metamorphic buffer layer on GaAs substrate in 2008. However, no GaAs based QD laser emitting at 1.55 m has been realized.On the research of metamorphic InGaAs QW, I. Tangring [10] reported a 1.27-m metamorphic QW laser emitting at RT in 2006. Our group [11] cooperating with Chalmers University of Science and Technology researched the growth of metamorphic epitaxy materials, realized the high-quality 1.3-m continuous-wave (CW) semiconductor QW laser emitting at RT, extended the emission wavelength to 1.55 m and beyond, and reported a 1.58-m impulse-wave InGaAs metamorphic QW laser emitting at RT.…”

mentioning

confidence: 99%

Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

Zhu

Wang

et al. 2011

Optoelectron. Lett.

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Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2011 C The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely.The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-m GaAs based metamorphic InGaAs QW is completed. A 1.3-m GaAs based metamorphic laser is reported.Among all kinds of photoelectric materials, the GaAs based 0.8 1.2 m near infrared material has been used widely. The GaAs based heteroepitaxial structures mainly include GaAlInAs materials. Considerable efforts have been devoted to GaAs based 1.3-m and beyond materials for their excellent performance such as low cost [1] , stable temperature characteristics [2] , compatible with the distributed Bragg reflectors [3] , and so on. Several structures, such as InGaAs quantum dot (QD), GaInNAs quantum well (QW), have been put forward. They have received great success in material growth and device fabrication around 1.3 m, but many problems will exist when the wavelength is extended to 1.55 m. On the research of GaInNAs(Sb) materials, 1.33-m and 1.59-m GaInNAs QW lasers emitting at room temperature (RT) have been realized [4][5][6][7][8] , but this kind of material is not stable enough for commercial production.In recent years, a metamorphic structure used in high electron mobility transistor (HEMT) materials has been paid much attention and introduced into GaAs based long wavelength light-emitting materials. Z. Mi et al [9] achieved 1.52-m RT emitting laser using InAs QD grown on InGaAs metamorphic buffer layer on GaAs substrate in 2008. However, no GaAs based QD laser emitting at 1.55 m has been realized.On the research of metamorphic InGaAs QW, I. Tangring [10] reported a 1.27-m metamorphic QW laser emitting at RT in 2006. Our group [11] cooperating with Chalmers University of Science and Technology researched the growth of metamorphic epitaxy materials, realized the high-quality 1.3-m continuous-wave (CW) semiconductor QW laser emitting at RT, extended the emission wavelength to 1.55 m and beyond, and reported a 1.58-m impulse-wave InGaAs metamorphic QW laser emitting at RT. All results above prove that the metamorphic structure is an efficient way to extend the emitting wavelength of GaAs based materials. In this paper, we investigate the growth of InGaAs/GaAs metamorphic materials by molecular beam epitaxy (MBE) and a CW 1.3-m low threshold current density InGaAs metamorphic QW laser emitting at RT, and further decrease the threshold current density from 490 A/cm 2 to 205 A/cm 2 compared with our previous work.All samples used in this study are grown on n + -GaAs (100) substrate by a solid source Veeco Mod Gen II MBE system. After removing the oxide, a 300-nm GaAs buffer is grown followed by the InGaAs linear metamorphic structure in which the In component increases linearly fr...

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1.27 µm metamorphic InGaAs quantum well lasers on GaAs substrates

Cited by 29 publications

References 8 publications

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

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