1.3 <i>μ</i>m InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

Tatsumi, Tomohiko; Tanabe, Katsuaki; Iwamoto, Satoshi; Arakawa, Yasuhiko

doi:10.1063/1.4742198

Cited by 16 publications

(10 citation statements)

References 25 publications

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“…Metal bonding techniques have also been used for the fabrication of hybrid III/V/Si lasers [231], [232]. In 2013, Skorpios Technologies reported the first III/V/SOI hybrid laser fabricated in a commercial foundry, based on the metal bonding of a III/V die onto SOI [233].…”

Section: I N T E G R At E D L I G H T S O U R C E Smentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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Section: I N T E G R At E D L I G H T S O U R C E Smentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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“…However, the drawback of the AuGeNi-assisted bonding is the Au contamination. Thus, Tatsumi et al (2012) further demonstrated an Au-free metal-assisted wafer bonding for lasers on silicon chip. Besides, Creazzo et al (2013) also demonstrated another type of silicon laser by using metal-assisted bonding of III/V epitaxial material directly onto the silicon substrate.…”

Section: Review On Research For Lasers On Siliconmentioning

confidence: 99%

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

et al. 2015

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Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

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“…Besides these direct growth techniques, wafer bonding technologies have also been used to integrate high-performance InAs quantum dots lasers on silicon substrates. [14][15][16] The performance of such bonded InAs QD lasers is often degraded by the high temperature of the bonding process (>300 C for at least a few hours), [14][15][16][17][18][19][20][21][22] which intermixes the InAs QDs and their GaAs capping and spacer layers. On the other hand, it has been demonstrated that Palladium can form a solid alloy with III-V materials, such as Pd 4 GaAs or Pd x InP, by a solidphase topotaxial reaction at room temperature.…”

mentioning

confidence: 99%

“…It was found that permanent bonding can be achieved at a low temperature and time of 250 C and 1.5 h, respectively, at 1000 mbar pressure which is at least 50 C and 50% less than previously described metal-mediated bonding techniques. [14][15][16] After bonding, the GaAs substrate is removed by a combination of mechanical polishing and wet chemical etching, where the 30 nm Al 0.85 GaAs in the heterostructure acts as an etch stop layer. After removing the Al 0.85 GaAs, the ridge waveguide lasers are fabricated by standard process where the waveguide width of 5 lm was fixed and the cavity lengths were varied from 1000 to 2000 lm, respectively.…”

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confidence: 99%

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

Wang

Yao

Preble

et al. 2015

Applied Physics Letters

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InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 C) Pdmediated wafer bonding process. A low interfacial resistivity of only 0.2 X cm 2 formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J th and differential quantum efficiency g d of 240 A/cm 2 and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 lm, respectively. The InAs QD lasers also show operation up to 100 C with a threshold current density J th and differential quantum efficiency g d of 950 A/cm 2 and 9.3%, respectively. The temperature coefficient T 0 of 69 K from 60 to 100 C is characterized from the temperature dependent J th measurements. V

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1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

Abstract: Over 1.3 μ m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates Appl.

Cited by 16 publications

References 25 publications

The Emergence of Silicon Photonics as a Flexible Technology Platform

The Emergence of Silicon Photonics as a Flexible Technology Platform

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

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